Multi-level memory cell having phase change element and...

Details Multi-level memory cell having phase change element and... Multi-level memory cell having phase change element and...

2011-06-21

2011-06-21

Prenty, Mark (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Resistor

C257SE45002

Reexamination Certificate

active

07964468

ABSTRACT:
A multi-level, phase change memory cell has first and second thermal isolation materials having different thermal conductivity properties situated in heat-conducting relation to first and second boundaries of the phase change material. Accordingly, when an electrical current is applied to raise the temperature of the memory material, heat is drawn away from the memory material asymmetrically along a line orthogonal to electric field lines between the electrodes.

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“New Memorie

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