Multi-level integrated photonic devices

Details Multi-level integrated photonic devices Multi-level integrated photonic devices

2011-07-05

2011-07-05

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S045000, C438S712000

Reexamination Certificate

active

07972879

ABSTRACT:
A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.

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