Multi level inhibit scheme

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185020, C365S185030, C365S185190

Reexamination Certificate

active

07864585

ABSTRACT:
Memory devices and methods are disclosed to facilitate utilization of a multi level inhibit programming scheme. In one such embodiment, isolated channel regions having boosted channel bias levels are formed across multiple memory cells and are created in part and maintained through capacitive coupling with word lines coupled to the memory cells and biased to predetermined bias levels. Methods of manipulation of isolated channel region bias levels through applied word line bias voltages affecting a program inhibit effect, for example, are also disclosed.

REFERENCES:
patent: 6469933 (2002-10-01), Choi et al.
patent: 7020026 (2006-03-01), Guterman et al.
patent: 7170788 (2007-01-01), Wan et al.
patent: 7206235 (2007-04-01), Lutze et al.
patent: 7215574 (2007-05-01), Khalid et al.
patent: 7269068 (2007-09-01), Chae et al.
patent: 7269069 (2007-09-01), Cernea et al.
patent: 7372754 (2008-05-01), Hwang et al.
patent: 7411827 (2008-08-01), Guterman et al.
patent: 7433241 (2008-10-01), Dong et al.
patent: 7440326 (2008-10-01), Ito
patent: 7463531 (2008-12-01), Hemink et al.
patent: 7468918 (2008-12-01), Dong et al.
patent: 7508715 (2009-03-01), Lee
patent: 7535763 (2009-05-01), Hemink
patent: 7567460 (2009-07-01), Chae et al.
patent: 7623385 (2009-11-01), Kim et al.
patent: 7656703 (2010-02-01), Dong et al.
patent: 2004/0105308 (2004-06-01), Matsunaga et al.
patent: 2005/0248988 (2005-11-01), Guterman et al.
patent: 2005/0248989 (2005-11-01), Guterman et al.
patent: 2007/0025155 (2007-02-01), Hwang et al.
patent: 2007/0140013 (2007-06-01), Kwon et al.
patent: 2008/0019183 (2008-01-01), Chae et al.
patent: 2008/0068891 (2008-03-01), Guterman et al.
patent: 2008/0130360 (2008-06-01), Kim
patent: 2008/0159002 (2008-07-01), Dong et al.
patent: 2008/0159003 (2008-07-01), Dong et al.
patent: 2008/0159004 (2008-07-01), Hemink et al.
patent: 2008/0291735 (2008-11-01), Dong et al.
patent: 2008/0291736 (2008-11-01), Dong et al.
patent: 2009/0010067 (2009-01-01), Lee
Ken Takeuchi, et al. “A Source-line Programming Scheme for Low Voltage Operation NAND Flash Memories”, 1999 Symposium on VLSI Circuits Digest of Technical Papers, pp. 37-38.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Multi level inhibit scheme does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multi level inhibit scheme, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi level inhibit scheme will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2702782

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.