Multi-layered wiring structure of semiconductor integrated circu

Details Multi-layered wiring structure of semiconductor integrated circu Multi-layered wiring structure of semiconductor integrated circu

1990-10-30

1992-04-07

Wojciechowicz, Edward J.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

357 68, 361400, 174 521, H01L 2348

Patent

active

051032872

ABSTRACT:
An insulation film is formed on a semiconductor substrate in which semiconductor elements are formed. A plurality of wiring layers and interlaid insulation films are alternately laminated on the insulation film. The design margins of the laminated wiring layers and via holes formed in the interlaid insulation films are set to be larger as they are set at a higher level. The design margin is determined by using the focus margin, mask misalignment due to the mask alignment accuracy, pattern size conversion error, warp of the semiconductor substrate and irregularity of the surface of the semiconductor substrate as parameters.

REFERENCES:
patent: 4656732 (1987-04-01), Teng et al.

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