Multi-layered structure for ohmic electrode fabrication

Details Multi-layered structure for ohmic electrode fabrication Multi-layered structure for ohmic electrode fabrication

1997-11-26

1999-11-09

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257763, 257766, 257770, H01L 2348, H01L 2352, H01L 2940

Patent

active

059820365

ABSTRACT:
An ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics is disclosed. A non-single crystal InAs layer, Ni film, WSi film and W film are sequentially deposited on an n.sup.+ -type GaAs substrate by sputtering, etc. and subsequently patterned by lift-off, etc. to make a multi-layered structure for fabricating ohmic electrodes. The structure is then annealed first at, e.g. 300.degree. C. for 30 minutes and next at, e.g. 650.degree. C. for one second to fabricate an ohmic electrode.

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