Multi-layered metallized silicon matrix substrate

Details Multi-layered metallized silicon matrix substrate Multi-layered metallized silicon matrix substrate

1980-04-24

1982-12-14

Kucia, R. R.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

156 89, 156 57, 174 685, 428428, 501154, H05K 103

Patent

active

043641008

ABSTRACT:
A multi-layer metallized substrate comprises a matrix of sintered silicon particles joined by a thin insulating layer of silicon dioxide or silicon nitride. Semiconductor circuit chips are bonded to the surface of the substrate to form an electrically connected, unitary integrated circuit module structure.

REFERENCES:
patent: 3180742 (1965-04-01), Bennett
patent: 3461524 (1969-08-01), Lepselter
patent: 3628778 (1966-08-01), Worsham
patent: 3637425 (1972-01-01), McMillan
patent: 3996885 (1976-06-01), May
patent: 4040849 (1977-08-01), Greskovich
patent: 4168343 (1979-09-01), Arai
patent: 4261781 (1981-04-01), Edmonds

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