Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections
Reexamination Certificate
2008-04-15
2008-04-15
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular signal path connections
C257S208000, C257S211000, C257S758000, C257S776000
Reexamination Certificate
active
07358549
ABSTRACT:
In accordance with the objectives of the invention a new method and structure is provided for the creation of multiple overlying layers of interconnect metal. A channel is reserved for the creation of via interconnects, no vias are placed on metal lines. The metal lines are stacked and parallel, whereby a space is provided between lines that is reserved for the creation of vias for layer interconnection. This structure can be repeated, the vias are placed on the therefore reserved channel, interconnections are provided to the interconnect traces.
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Duane Morris LLP
Taiwan Semiconductor Manufacturing Company
Vu Hung
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