Multi-layered metal interconnection

Details Multi-layered metal interconnection Multi-layered metal interconnection

2009-05-22

2011-10-04

Williams, A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257SE23145, C257SE21597, C257SE23144, C257SE23167, C257SE23161, C257S576000, C257S775000, C257S758000, C257S751000, C257S753000, C257S760000, C257S762000, C257S774000

Reexamination Certificate

active

08030779

ABSTRACT:
A multi-layered metal interconnection includes a diffusion barrier directly formed on a conductive layer, an etching stop layer directly formed on the diffusion barrier, at least one dielectric layer formed over the etch stop layer, at least one of a via formed in the at least one dielectric layer and a trench formed in the at least one dielectric layer.

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