Multi-layered magneto-resistive thin film sensor

Details Multi-layered magneto-resistive thin film sensor Multi-layered magneto-resistive thin film sensor

1997-09-16

1999-06-22

Patidar, Jay M.

Electricity: measuring and testing

Magnetic

Magnetometers

360113, G01R 3302, H01L 4308, G11C 1908, G11B 539

Patent

active

059145978

ABSTRACT:
The change rate of resistance in a multi-layered spin-valve magneto-resistive thin film using a FeMn anti-ferromagnetic layer has been improved. In multi-layered magento-resistive thin film having a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer with an adjoining anti-ferromagnetic layer are laminated on a substrate; the magnetizing direction of each ferromagnetic layer lying in the film surface; the magnetizing direction of the second ferromagnetic layer being pinned by the magnetic exchange coupling field generated by the anti-ferromagnetic layer; and the magnetizing direction of the first ferromagnetic layer not being pinned, the degree of dispersion of lattice spacing, or lattice relaxations at the interface of the second ferromagnetic layer and the anti-ferromagnetic layer is set to equal to or less than 0.5 A.

REFERENCES:
patent: 5206590 (1993-04-01), Dieny et al.
patent: 5583725 (1996-12-01), Coffey et al.

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