Multi-layered interconnection structure for a semiconductor devi

Details Multi-layered interconnection structure for a semiconductor devi Multi-layered interconnection structure for a semiconductor devi

1991-07-08

1992-11-10

Quach, T. N.

Fishing, trapping, and vermin destroying

437190, 437192, 148DIG19, H01L 21253

Patent

active

051622629

ABSTRACT:
An interconnection layer of a semiconductor device according to the present invention has in a contact portion with a conductor layer a multi-layered structure formed from the bottom, of a refractory metal silicide layer, a first refractory metal nitride layer, and a secondary refractory metal nitride layer. Titanium or tungsten is used as a refractory metal. The second refractory metal nitride is formed by thermally nitriding the refractory metal layer. The second refractory metal nitride layer formed by the thermal process has a close packed crystal structure and has an excellent barrier characteristic.

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patent: 4822753 (1989-04-01), Pintchovski et al.
patent: 4920071 (1990-04-01), Thomas
patent: 4998157 (1991-03-01), Yokoyama et al.
Ting et al, "The Use of Titanium-Based Contact Barrier Layers in Silicon Technology", Thin Solid Films, 96 (1982) pp. 327-345.

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