Multi-layered interconnection structure for a semiconductor devi

Details Multi-layered interconnection structure for a semiconductor devi Multi-layered interconnection structure for a semiconductor devi

1990-03-12

1991-09-17

Hille, Rolf

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357 235, 365185, H01L 2348

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050499750

ABSTRACT:
An interconnection layer of a semiconductor device according to the present invention has in a contact portion with a conductor layer a multi-layered structure formed from the bottom, of a refractory metal silicide layer, a first refractory metal nitride layer, and a second refractory metal nitride layer. Titanium or tungsten is used as a refractory metal. The second refractory metal nitride is formed by thermally nitriding the refractory metal layer. The second refractory metal nitride layer formed by the thermal process has a close packed crystal structure and has an excellent barrier characteristic.

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patent: 4558339 (1985-12-01), Angle
patent: 4590503 (1986-05-01), Harai et al.
patent: 4599706 (1986-07-01), Guterman
patent: 4792842 (1988-12-01), Honma et al.
patent: 4870615 (1989-09-01), Maruyama et al.
patent: 4887146 (1989-12-01), Hinode

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