Multi-layered integrated circuit and apparatus with thermal...

Details Multi-layered integrated circuit and apparatus with thermal... Multi-layered integrated circuit and apparatus with thermal...

2011-06-07

2011-06-07

Hoang, Quoc D (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With integrated trigger signal amplification means

C257SE31097

Reexamination Certificate

active

07956381

ABSTRACT:
A multi-layered semiconductor apparatus capable of producing at least 500 W of continuous power includes at least two device substrates arranged in a stack. Each of the at least two device substrates has a first side and a second side opposite to the first side, and each of the at least two device substrates is configured to produce an average power density higher than 100 W/cm2. A plurality of active devices are provided on the first side of each of the at least two device substrates. The plurality of active devices are radiatively coupled among the at least two device substrates. At least one of the at least two device substrates is structured to provide a plurality of cavities on its second side to receive corresponding ones of the plurality of active devices on the first side of an adjacent one of the at least two device substrates.

REFERENCES:
patent: 6794747 (2004-09-01), Takehara et al.
patent: 7126212 (2006-10-01), Enquist et al.
patent: 7679914 (2010-03-01), Kashiwazaki
patent: 2005/0186800 (2005-08-01), Brewer
Moran, P.D., et al., “Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3substrates by wafer bonding,” Applied Physics Letters, vol. 78, No. 15, Apr. 9, 2001, pp. 2232-2234.

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