Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-06-14
2011-06-14
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257SE27100
Reexamination Certificate
active
07960731
ABSTRACT:
A multi-layered complementary conductive line structure, a manufacturing method thereof and a manufacturing method of a TFT (thin film transistor) display array are provided. The process of TFT having multi-layered complementary conductive line structures does not need to increase the mask number in comparison with the currently process and is able to solve the resistance problem of the lines inside a display.
REFERENCES:
patent: 4938567 (1990-07-01), Chartier
patent: 2003/0073267 (2003-04-01), Baek et al.
patent: 2005/0073619 (2005-04-01), Chen et al.
Chang Chi-Ming
Chen Chi-Lin
Chen Yu-Cheng
Booth Richard A.
Industrial Technology Research Institute
Jianq Chyun IP Office
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