Multi-layer wirings on a semiconductor device and fabrication me

Details Multi-layer wirings on a semiconductor device and fabrication me Multi-layer wirings on a semiconductor device and fabrication me

1990-08-10

1991-12-10

James, Andrew J.

Stock material or miscellaneous articles

Composite

Of bituminous or tarry residue

357 67, 357 68, 357 51, 428209, H01L 2348, H01L 2946, H01L 2954, H01L 2962

Patent

active

050722824

ABSTRACT:
A first layer-wiring formed of a material soluble in a solution containing hydrofluoric acid (HF) is protected in an insulating layer. A second layer-wiring insulatingly overlying the first layer is connected with the first layer-wiring via a third layer-wiring which is resistant to a solution containing HF. When contact holes are opened through the insulating layer so as to lead out the first layer-wiring and/or a part of the semiconductor substrate, the first layer-wiring is not exposed to HF containing solution for cleaning the exposed materials in the opened holes. Accordingly, a material having small electrical conductivity but soluble by the HF can be employed for the layer-wiring allowing a high density integration as well good electrical contact with the Si substrate and with other multi-layer wirings.

REFERENCES:
patent: 4436582 (1984-03-01), Saxena
patent: 4533935 (1985-08-01), Mochizuki
patent: 4707723 (1987-11-01), Okamoto et al.
patent: 4708904 (1987-11-01), Shmizu et al.

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