Multi-layer wiring structure having narrowed portions at predete

Details Multi-layer wiring structure having narrowed portions at predete Multi-layer wiring structure having narrowed portions at predete

1993-08-31

1999-01-12

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257758, 257770, 257767, H01L 2906

Patent

active

058594760

ABSTRACT:
A semiconductor device having a laminated wiring layer composed of an Al or Al alloy layer and a high melting point conductive layer, wherein the laminated wiring layer has narrowed portions at which the stress tolerance of the Al or Al alloy is reduced. The controlled breakage of the Al or Al alloy layer at the narrowed portion results in a laminated wiring layer of a predetermined resistance component.

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Amazawa et al., Selective Growth of Aluminum Using a Novel CVD System, IEDM 88, pp. 442-445, 1988.

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