Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1995-08-02
1996-07-23
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257758, 257763, 257776, H01L 23535, H01L 2943
Patent
active
055392270
ABSTRACT:
A method of producing a multi-layer wiring, first kind layer wirings formed on a semiconductor substrate are covered by an insulating film, a part of a second kind layer wiring is formed at a prescribed region of the surface of the insulating film, and, thereafter, the remaining part of the second kind layer wiring and the third kind layer wiring are formed in the same process so that the remaining part of the second kind layer wiring and the first kind layer wiring cross each other in an airbridge structure and the third kind layer wiring and a part of the second kind layer wiring also cross each other in an airbridge structure. The portion of the second kind layer wiring other than the portion that crosses with the third kind layer wiring in an airbridge structure, is produced with the first kind layer wiring in an airbridge structure in the process of producing the third kind layer wiring. Therefore, at least one of the crossing parts between the first kind layer wiring and the second kind layer wiring can be formed in an airbridge structure, and as a result, a multi-layer wiring that has reduced inter-layer capacitance over all of the multi-layer wiring structure is obtained by the number of process steps as in the prior art.
REFERENCES:
patent: 3890636 (1975-06-01), Harada et al.
patent: 4933743 (1990-06-01), Thomas et al.
patent: 5095352 (1992-03-01), Noda et al.
patent: 5171713 (1992-12-01), Matthews
Inoue et al, "A Rh/Au/Rh Rigid Air-Bridge Interconnection Technique for Ultra-High Speed GaAs LSIs", 1990 IEEE, pp. 253-256.
Brown Peter Toby
Mitsubishi Denki & Kabushiki Kaisha
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