Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Plural recrystallized semiconductor layers
Patent
1992-08-07
1994-06-28
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Plural recrystallized semiconductor layers
257723, H01L 2701, H01L 2713, H01L 2978
Patent
active
053249801
ABSTRACT:
A multi-layer type semiconductor device is disclosed, in which a plurality of semiconductor layers are formed in vertically opposite directions. The multi-layer type semiconductor device is obtained by forming a first semiconductor layer, an insulating layer and a second semiconductor layer in the mentioned order on a main surface of a first substrate, forming a semiconductor device by using the second semiconductor layer as a base, with an exposed surface thereof directed upward, forming an insulating film on the semiconductor device, attaching a second substrate to the insulating film, thinning the first substrate to expose the first semiconductor layer, and forming a further semiconductor device by using the first semiconductor layer as a base, with an exposed surface of the first semiconductor layer directed upward. A single- chip type image forming system or sensing system may be provided by employing, as the semiconductor devices, a sensing device such as a photosensor, a pressure sensor or the like, a processing circuit for processing a signal received from the sensor, and a display device for displaying results of the processing. A large number of pads may be provided by arranging the pads on opposite surfaces of a chip.
REFERENCES:
patent: 4939568 (1990-07-01), Kato et al.
Crane Sara W.
Mitsubishi Denki & Kabushiki Kaisha
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