Multi-layer thick-film RF package

Details Multi-layer thick-film RF package Multi-layer thick-film RF package

2010-11-08

2011-10-11

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Insulative housing or support

C257SE21499

Reexamination Certificate

active

08034666

ABSTRACT:
A method for producing a multi-layer thick-film RF package includes forming conductive layer(s) including one or more source portions, one or more gate portions, and/or one or more drain portions on a ceramic substrate. The conductive layer(s) and the ceramic substrate are fired or otherwise heated in a furnace until sintered. Thereafter, a dielectric pattern is formed on the conductive layer(s) and fired or otherwise heated in the furnace until sintered. Then, a conductive bridge is formed on the dielectric pattern, over the one or more drain portions and between the one or more source portions, which is then fired until sintered in the furnace. As a result, a monolithic, single-piece, sintered, high-frequency RF power transistor package having circuit features including a highly conductive and low capacitive bridge is produced.

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