Multi-layer superhard film structure

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51307, 51309, 428336, 428408, C30B 2104, C23C 2804

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053105966

ABSTRACT:
A multi-layer diamond film is grown by d.c. arc assisted plasma deposition. A series of layers are deposited on each other by periodically back-etching the surface and renucleating during deposition. There may also be deposited a thin layer of non-diamond carbon material between the diamond layers, but no other non-carbon material. Renucleation is controlled by varying the proportion of methane to hydrogen in the feed gases, by temperature cycling of the substrate, or by inducing modal changes in the arc.

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patent: 4725345 (1988-02-01), Sakamot et al.
patent: 4731296 (1988-03-01), Kikuchi et al.
patent: 4734339 (1988-03-01), Schachner et al.
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patent: 4929489 (1990-05-01), Dreschhoff et al.
patent: 5114696 (1992-05-01), Purdes et al.
English translation of JP63-277593 (Nov. 1988).
Badzian et al "Crystallization of Diamond Crystals and Films by Microwave Assited CVD Chart II)" Mat. Res. Bull. vol. 23 pp. 531-548 (1988).

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