Multi-layer structured nitride-based semiconductor devices

Details Multi-layer structured nitride-based semiconductor devices Multi-layer structured nitride-based semiconductor devices

1997-10-22

2000-09-19

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

257 94, 257185, 257196, 438 37, 438 46, A01L 3300, A01L 31109, A01L 310328, A01L 310336

Patent

active

061216380

ABSTRACT:
At an n--n hetero-interface in a GaN-based or ZnSe-based multilayered semiconductor laser and light-emitting diode, an excessive voltage drop causing the operating voltage to increased is reduced, thereby lengthening the service life of the device. A single or plurality of n-type intermediate layers are provided in the n--n hetero-interface region where the excessive voltage drop develops. The excessive voltage drop developing at the n--n hetero-interface is decreased by setting the energy value at the edge of the conduction band of each intermediate layer to a mid-value between the energy values at the edges of the conduction bands of the n-type compound semiconductors adjoining both sides of the intermediate layer. The configuration of a GaN-based MQW laser including the intermediate layer formed on sapphire substrate is shown. The relationship between the lattice constant of an intermediate layer necessary for obtaining an intermediate layer excellent in crystallinity suitable for the above object and the lattice constants of compound semiconductors adjoining both sides of the intermediate layer is described.

REFERENCES:
patent: 5290393 (1994-03-01), Nakamura
patent: 5592501 (1997-01-01), Edmond et al.
patent: 5652434 (1997-07-01), Nakamura et al.
patent: 5834331 (1998-11-01), Razeghi

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