Multi-layer silicon carbide light emitting diode having a PN jun

Details Multi-layer silicon carbide light emitting diode having a PN jun Multi-layer silicon carbide light emitting diode having a PN jun

1992-12-02

1994-05-17

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257101, 257102, 257103, H01L 3300

Patent

active

053130782

ABSTRACT:
This invention is a multi-layer pn type silicon carbide light emitting diode. A first n-type silicon carbide layer is deposited on an n-type substrate. The first n-type silicon carbide layer has an electron concentration larger than 1.times.10.sup.15 cm.sup.-3 and smaller than the electron concentration of the substrate and has a thickness of between 0.1 to 20 .mu.m. A second n-type silicon carbide layer is disposed over the first n-type layer. A first p-type silicon carbide layer is disposed on the second n-type layer to form a PN junction layer.

REFERENCES:
patent: 3972749 (1976-08-01), Pavlichenko
patent: 3986193 (1976-10-01), Vodakov et al.
patent: 4918497 (1990-04-01), Edmond
patent: 5027168 (1991-06-01), Edmond
patent: 5061972 (1991-10-01), Edmond
patent: 5063421 (1991-11-01), Suzuki et al.
Ikeda et al., "Fabrication of 6H-SiC light-emitting diodes by a rotation dipping technique: electroluminescence mechanisms" J. Appl. Phys. (1979) 50(12):8215-8225.

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