Multi-layer semiconductor photovoltaic device

Details Multi-layer semiconductor photovoltaic device Multi-layer semiconductor photovoltaic device

1975-10-15

1977-03-29

Lynch, Michael J.

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

357 38, 136 89EE, H01L 3104

Patent

active

040152804

ABSTRACT:
A semiconductor photovoltaic device is comprised of 2n layers of alternating p-type and n-type material having respective PN junctions between adjacent layers, wherein n is an integer greater than 1. Each layer has a thickness which is less than the diffusion length of a minority carrier therein. The PN junctions are excited by light which is incident on the device to thereby cause majority carriers to be accumulated in the respective layers so as to forward bias all of the PN junctions. As a result of this forward biasing, minority carriers are injected across a first PN junction fr0m one layer into an adjacent layer and then traverse the next PN junction into the next succeeding layer. The photovoltaic device thus is adapted to supply a voltage and a current to a load.

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patent: 3936319 (1976-02-01), Anthony et al.
Wolfe, "Limitations and Possibilities for Improvement of Photovoltaic Solar Energy Converters," Proceedings of IRE, vol. 48, No. 7, July 1960, pp. 1246-1263.

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