Multi-layer semiconductor devices with stress-relief profiles

Details Multi-layer semiconductor devices with stress-relief profiles Multi-layer semiconductor devices with stress-relief profiles

1999-05-03

2001-01-23

Davie, James W. (Department: 2881)

Coherent light generators

Particular temperature control

Heat sink

C372S050121

Reexamination Certificate

active

06178189

ABSTRACT:

FIELD OF THE INVENTION
This invention relates to multi-layered semi-conductor devices and more particularly to laser diodes which tend to bow out from the desirable planar configuartion for which they are designed.
BACKGROUND OF THE INVENTION
Multi-layered laser diodes are well known in the art. Such devices are fabricated by metal organic chemical vapor deposition techniques in which successive layers are deposited on a substrate surface to define buffer layers with the substrate and, in succession, a cladding layer, a waveguide layer, an active region, another waveguide layer, a cladding layer and a contact layer. The layers comprise different compositions, require different changes in temperature and have different coefficients of expansion. Thus, stress is often introduced into the structure which causes the devices to bow out of plane.
A variety of techniques have been employed to compensate for such bowing. Thus, such structures have been secured to a planar plate. Also, fiber optic bundles have been secured to match such bowing and coupled to the bowed devices. The invention is based on the recognition that about one half of the bowing is attributed to stress induced by those successive layers of different compositions.
BRIEF DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS OF THIS INVENTION
In accordance with the principles of this invention, a bowed diode is etched to remove portions of the device where multiple layers produce stress and which are non-contributory to device performance. In one embodiment in which bowed diodes are formed with mesas, from the front facet of which light is emitted, the troughs between the mesas are etched into the substrate to remove multi-layer, non contributing portions of the device. In another embodiment, the substrate of the device is made relatively thick initially and slots are etched into the backside of the device along axes perpendicular to the axes of mesas which define the emitting facets.


REFERENCES:
patent: 4069463 (1978-01-01), McGroddy et al.
Zory, P. S., Continuous Wave Laser Array, IBM Technical Disclosure Bulletin vol. 18, No. 10, pp. 3497 and 3498, Mar. 1976.

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