Multi-layer passivant system

Details Multi-layer passivant system Multi-layer passivant system

1981-05-29

1983-12-13

Edlow, Martin H.

357 52, 357 13, H01L 2934

Patent

active

044207654

ABSTRACT:
There is disclosed a semiconductor device having a PN junction terminating at a surface and passivated by a multi-layer passivant system comprising a first layer of semi-insulating material over the surface, a layer of dielectric material over the first layer and a second layer of semi-insulating material over the dielectric layer. Preferably, the first and second layers are oxygen doped polycrystalline silicon and the dielectric layer is either silicon dioxide of frit glass fused to the first layer.

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patent: 4014037 (1977-03-01), Matsushita et al.
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patent: 4081292 (1978-03-01), Aoki et al.
patent: 4084986 (1978-04-01), Aoki et al.
patent: 4174252 (1979-11-01), Kressel et al.
patent: 4194934 (1980-03-01), Blaske et al.
patent: 4344985 (1982-08-01), Goodman et al.
patent: 4375125 (1983-03-01), Byatt

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