Multi-layer metal silicide infrared detector

Details Multi-layer metal silicide infrared detector Multi-layer metal silicide infrared detector

1989-08-08

1991-10-08

James, Andrew J.

357 15, 357 71, H01L 2714, H01L 3100

Patent

active

050559010

ABSTRACT:
The efficiency of a metal silicide infrared (10) in greatly enhanced by depositing on the substrate (14) a stack (30) of alternating metal silicide (12,24) and silicon layers (22). The metal silicide layers (12,24) are connected to each other and to a contact pad (20) in the substrate (14) by a metal silicide deposit (32) on one side of the stack (30) and the silicon layers (22) are connected to each other and to the substrate (14) by a silicon deposit (34) on another side of the stack (30). The stacking of layers is made possible by depositing the silicon layers (22) at a rate of 1 .ANG./sec or less in a vacuum of 10.sup.-9 torr or better at a temperature of about 250.degree. C.

REFERENCES:
patent: 4398335 (1983-08-01), Lehrer
patent: 4496964 (1985-01-01), Tsubouchi et al.
patent: 4524374 (1985-06-01), Denda et al.
patent: 4544939 (1985-10-01), Kosonocky et al.
patent: 4586069 (1986-04-01), Koniger et al.
Wu et al., "The Optimization of the Optical Cavity of Infrared Schottky-Barrier Detectors," 1987, Solid State Electronics, vol. 30, No. 1, pp. 97-104.
Kimata et al., "A 512.times.512-Element PtSi Shottky-Barrier Infrared Image Sensor," Dec. 1987, IEEE Journal of Solid-State Circuits, vol. SC-22, No. 6, pp. 1124-1129.

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