Multi-layer metal sandwich with taper and reduced etch bias and

Details Multi-layer metal sandwich with taper and reduced etch bias and Multi-layer metal sandwich with taper and reduced etch bias and

1997-09-20

1999-06-15

Arroyo, Teresa M.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257764, H01L 2348

Patent

active

059125063

ABSTRACT:
A multi-layer metal sandwich structure with taper and reduced etch bias formed on a substrate includes a first metal layer formed on the substrate and a second metal layer formed on the first metal layer. The width of the first metal layer is greater than the width of the second metal layer at the interface of the first metal layer and the second metal layer. The second metal layer has tapered side walls. The taper angle between each side wall and the intersection of the first and second metal layers is between 5.degree. and 90.degree.. The multi-layer metal sandwich may also include a third metal layer formed on the second metal layer.

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"Low Resistance Gate Line for High-Resolution TFT/LCD Display", T. Tsujimura, H. Kitahara, A. Makita, P. Fryer and J. Batey.

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