Multi-layer low modulation polycrystalline semiconductor resisto

Details Multi-layer low modulation polycrystalline semiconductor resisto Multi-layer low modulation polycrystalline semiconductor resisto

1993-05-18

1994-09-20

Lateef, Marvin M.

Electrical resistors

With base extending along resistance element

Resistance element and/or terminals printed or marked on base

338308, 338314, 257536, H01C 1012

Patent

active

053493257

ABSTRACT:
The material to be used in a semiconductor resistor is produced by successively depositing multiple layers of substantially intrinsic polycrystalline semiconductor material. The deposition process is stopped between layers to create an interruption of the polycrystalline structure of the semiconductor material. This interruption reduces the modulation experienced by the resistor when it is located above an underlying conductor in a semiconductor circuit. Such a configuration typically exists in a memory cell where the load resistor of a field-effect transistor is located over the gate of the transistor.

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Wolf, Silicon Processing for the VLSI Era, Copyright 1990, Lattice Press, vol. 2, pp. 581, 578, and 575-576.
Wolf et al, Silicon Processing for the VLSI Era, Copyright 1986, Lattice Press, vol. 1, pp. 175-177.

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