Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2007-05-17
2009-12-22
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257SE23007, C257S737000
Reexamination Certificate
active
07635914
ABSTRACT:
In a method and system for fabricating a semiconductor device (100) having a package-on-package structure, a base laminate substrate (BLS) (110) is formed to include a base center portion (112) and a peripheral portion (114) separated by a barrier element (120). The barrier element (120) forms a peripheral wall (118) to surround the base center portion (112). A frame shaped top laminate substrate (TLS) (130) is disposed over the peripheral portion (114) of the BLS (110). The TLS (130) has an open top center portion (132) matching the base center portion (112) surrounded by the peripheral wall (118) to form a cavity (140). A plurality of conductive bumps (150) each disposed between a top contact pad (134) of the TLS and a base contact pad (116) of the peripheral portion (114) of the BLS (110) are formed to provide electrical and mechanical coupling therebetween. The barrier element (120) forms a seal between the cavity (140) and the plurality of conductive bumps (150).
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Chauhan Satyendra Singh
Murtuza Masood
Palaniappan Prema
Brady III Wade J.
Potter Roy K
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tung Yingsheng
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