Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2006-06-27
2006-06-27
Owens, Douglas W (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S777000
Reexamination Certificate
active
07067909
ABSTRACT:
A multi-layer integrated semiconductor structure is provided, which includes at least a first semiconductor structure and a second semiconductor structure coupled together via an interface. The interface includes at least a first portion adapted to provide a communication interface between the first semiconductor structure and the second semiconductor structure and at least a second portion adapted to reduce electrical interference between the first semiconductor structure and the second semiconductor structure.
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Chandrakasan Anantha
Checka Nisha
Reif Rafael
Daly, Crowley & Mofford & Durkee, LLP
Massachusetts Institute of Technology
Owens Douglas W
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