Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-01-31
2006-01-31
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000, C257S745000, C257S766000, C257S762000
Reexamination Certificate
active
06992334
ABSTRACT:
A high performance, highly reflective ohmic contact, in the visible spectrum (400 nm–750 nm), has the following multi-layer metal profile. A uniform and thin ohmic contact material is deposited and optionally alloyed to the semiconductor surface. A thick reflector layer selected from a group that includes Al, Cu, Au, Rh, Pd, Ag and any multi-layer combinations is deposited over the ohmic contact material.
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Krames Michael R
Rudaz Serge L
Wierer Jr. Jonathan J.
Jackson Jerome
Lumileds Lighting U.S. LLC
Patent Law Group LLP
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