Multi-layer gate stack

Details Multi-layer gate stack Multi-layer gate stack

2007-06-12

2007-06-12

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C252S079100, C252S079400

Reexamination Certificate

active

10314380

ABSTRACT:
A method of making a semiconductor structure, comprises etching a nitride layer with a plasma to form a patterned nitride layer. The nitride layer is on a semiconductor substrate, a photoresist layer is on the nitride layer, and the plasma is prepared from a gas mixture comprising CF4and CHF3at a pressure of at least 10 mTorr.

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