Multi-layer gap structure for high resolution magnetoresistive r

Details Multi-layer gap structure for high resolution magnetoresistive r Multi-layer gap structure for high resolution magnetoresistive r

1994-12-29

1996-10-22

Wolff, John H.

Dynamic magnetic information storage or retrieval

Head

Hall effect

G11B 5127

Patent

active

055683355

ABSTRACT:
A method of constructing a narrow gap magnetoresistive (MR) read head is provided which prevents shorting between lead layers and shield layers. This is accomplished by a two-step process of depositing first gap layers before an MR sensor is deposited and a two-step process of depositing second gap layers after the MR sensor is formed. A very thin first gap layer is deposited on a first shield layer. A first MR region is then masked and a first gap pre-fill layer is deposited. The mask is lifted off leaving the first gap pre-fill layer everywhere except in the first MR region. An MR sensor and first and second leads are formed by various novel arrangements resulting in contiguous junctions or continuous spacer junctions therebetween. After completion of the MR sensor and leads, a very thin second gap layer is deposited. A second MR region, which encompasses the MR sensor, is masked and a second gap pre-fill layer is deposited. The mask is then lifted off leaving the second gap pre-fill layer located everywhere except in the second MR region. The result is that very thin first and second gap layers are located in the MR regions below and above the MR sensor to provide the MR head with high linear resolution, and the first gap layer and the first gap pre-fill layer are located between the leads and the first shield layer, and the second gap layer and the second gap pre-fill layer are located between the leads and the second shield layer to prevent shorting between the lead layers and the shield layers.

REFERENCES:
patent: Re34099 (1992-10-01), Krounbi et al.
patent: 5212609 (1993-05-01), Yuito et al.
patent: 5241439 (1993-08-01), Michalek et al.
patent: 5264980 (1993-11-01), Mowry et al.
patent: 5272582 (1993-12-01), Shibata et al.
patent: 5296987 (1994-03-01), Anthony et al.
patent: 5311385 (1994-05-01), Schwarz et al.
patent: 5327313 (1994-07-01), Nishioka et al.
patent: 5331493 (1994-07-01), Schwarz
patent: 5337203 (1994-08-01), Kitada et al.
patent: 5350629 (1994-09-01), Chaug et al.
patent: 5371643 (1994-12-01), Yuito et al.
patent: 5375022 (1994-12-01), Gill et al.
patent: 5434826 (1995-07-01), Ravipati et al.
patent: 5436777 (1995-07-01), Soeya et al.

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