Multi-layer electrode and method of forming the same

Details Multi-layer electrode and method of forming the same Multi-layer electrode and method of forming the same

2008-01-15

2008-01-15

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S207000, C257S208000, C257S211000, C257S700000, C257S750000, C257S751000, C257S759000, C257S760000, C257S761000, C257S769000, C257S774000

Reexamination Certificate

active

07319270

ABSTRACT:
An interconnect includes an opening formed in a dielectric layer. A conductive barrier is deposited in the opening, over which a first conductive layer is deposited. A conductive oxide is deposited over the first conductive layer, and a second conductive layer, formed from the same material as the first conductive layer, is deposited over the conductive liner.

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