Multi-layer diodes and method of producing same

Details Multi-layer diodes and method of producing same Multi-layer diodes and method of producing same

2001-12-13

2003-02-11

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making regenerative-type switching device

C438S113000, C438S460000

Reexamination Certificate

active

06518101

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to a method for producing multilayer diodes and thyristors, respectively.
BACKGROUND INFORMATION
From the book “Power Semiconductor Devices” by B. Jayant Baliga, 1995, ISBN Number
0-534-94098-6
, PWS Publishing Company, page 266, thyristors having an emitter short-circuit structure are described in which the topmost highly n-doped layer of the multilayer arrangement is restricted by photolithography to defined regions on the surface.
SUMMARY OF THE INVENTION
In contrast, the method of the present invention has the advantage of providing an emitter short-circuit structure which can be produced in a simple manner and in parallel with notches for separating the diodes or thyristors from the wafer used. In addition, because of their lateral extension over the entire silicon wafer, the diffused layers exhibit high homogeneity, a high yield thereby being attained when manufacturing individual diodes and thyristors, respectively.


REFERENCES:
patent: 3706129 (1972-12-01), McCann
patent: 5468976 (1995-11-01), Eseev et al.
patent: 6291316 (2001-09-01), Knowles et al.
patent: 28 15 606 (1979-10-01), None
B. Jayant Baliga,Power Semiconductor Devices,ISBN No. 0-534-94098-6, PWS Publishing Company, 1995, p. 266.*

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