Multi-layer device and method for producing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Entirely of metal except for feedthrough

Reexamination Certificate

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Details

C257S659000, C257S660000, C257S704000, C438S108000, C438S109000

Reexamination Certificate

active

07023083

ABSTRACT:
A method for producing a multi-layer device. The method initially providing a substrate which comprises a support region for supporting an electrical component, then forming an electrically conductive bond layer on a surface of the substrate. The bond is configured to surround the region for supporting the component. The next step in the method is to provide an encasing layer in contact with the bond layer, such that the component is encased between the substrate and the encasing layer. The final step involves bonding the encasing layer to the bond layer to form a sealed cavity which encloses the component.Further, a multi-layer device is provided. The device comprises a substrate, at least one electrical component which is located on the substrate, an electrically conductive bond layer and an encasing layer. The bond layer is formed on the substrate and surrounds the electrical components and the encasing layer is bonded to the bond layer to form a sealed cavity encasing the components therein.

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Daniel Lapadatu et al.; “Building of Silicon Mechanical Sensors by Bulk Micromachining and Anodic Bonding”; 1998 International Semiconductor Conference, Sinaia, Romania Oct. 6-10, 1998; IEEE, vol. 1; pp. 33-44.
A.V. Chavan et al.; “A Monolithic fully-Integrated Vacuum-Sealed CMOS Pressure Sensor”; Proceedings of the IEEE 13thAnnual International Conference; Miyazaki, Japan, Jan. 23-27, 2000; IEEE, Jan. 23, 2000; pp. 341-346.

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