Semiconductor device manufacturing: process – Making passive device
Reexamination Certificate
2005-06-14
2005-06-14
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making passive device
C438S171000, C257S306000, C257S307000, C361S306300, C361S321100
Reexamination Certificate
active
06905936
ABSTRACT:
A multi-layer capacitor including a capacitor body including dielectric layers, and first and second internal electrode layers which are alternately laminated by mediation of the dielectric layers. The laminate of the first and second internal electrode layers and the dielectric layers are co-fired. The capacitor body further includes first and second electrode terminals formed on one main surface of the capacitor body. At least a single first via electrode extends through the capacitor body in the lamination direction of the capacitor body so as to connect the first electrode terminal and the first internal electrode layers, and at least a single second via electrode extends through the capacitor body in the lamination direction of the capacitor body so as to connect the second electrode terminal and the second internal electrode layers. The via electrodes have an aspect ratio of 4 to 30 as measured after firing.
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Murakami Kenji
Otsuka Jun
Sato Manabu
Sato Motohiko
Nelms David
NGK Spark Plug Co. Ltd.
Tran Long
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