Multi layer alignment and overlay target and measurement method

Details Multi layer alignment and overlay target and measurement method Multi layer alignment and overlay target and measurement method

2011-01-25

2011-01-25

Chowdhury, Tarifur (Department: 2886)

Optics: measuring and testing

By alignment in lateral direction

With registration indicia

C356S614000, C430S022000, C430S030000, C257S797000, C438S401000

Reexamination Certificate

active

07876439

ABSTRACT:
A target system for determining positioning error between lithographically produced integrated circuit fields on at least one lithographic level. The target system includes a first target pattern on a lithographic field containing an integrated circuit pattern, with the first target pattern comprising a plurality of sub-patterns symmetric about a first target pattern center and at a same first distance from the first target pattern center. The target system also includes a second target pattern on a different lithographic field, with the second target pattern comprising a plurality of sub-patterns symmetric about a second target pattern center and at a same second distance from the second target pattern center. The second target pattern center is intended to be at the same location as the first target pattern center. The centers of the first and second target patterns may be determined and compared to determine positioning error between the lithographic fields.

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