Multi-junction type solar cell device

Details Multi-junction type solar cell device Multi-junction type solar cell device

2011-03-22

2011-03-22

Fahmy, Wael M (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S016000, C257S022000, C257S030000, C257S033000, C257SE29339

Reexamination Certificate

active

07910916

ABSTRACT:
In a photoelectric conversion device, in a contact between a p-type semiconductor3aand an electrode2, an n-type semiconductor6of a conductivity type opposite to that of the p-type semiconductor is provided between the p-type semiconductor3aand the electrode2. The existence of the n-type semiconductor6allows a recombination rate of photo-generated carriers excited by incident light to be effectively reduced, and allows a dark current component to be effectively prevented from being produced. Therefore, it is possible to improve photoelectric conversion efficiency as well as to stabilize characteristics. Further, a tunnel junction is realized by increasing the concentration of a doping element in at least one or preferably both of the p-type semiconductor3aand the n-type semiconductor6in a region where they are in contact with each other, thereby keeping ohmic characteristics between the semiconductor and the electrode good.

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