Multi-junction solar cells and methods of making same using...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S458000, C257SE31001, C257S431000

Reexamination Certificate

active

07846759

ABSTRACT:
A multi-junction solar cell includes an active silicon subcell, a first non-silicon subcell bonded to a first side of the active silicon subcell, and a second non-silicon subcell bonded to a second side of the active silicon subcell. This and other solar cells may be formed by bonding and layer transfer.

REFERENCES:
patent: 4474647 (1984-10-01), Asselineau et al.
patent: 4499327 (1985-02-01), Kaiser
patent: 5013681 (1991-05-01), Godbey et al.
patent: 5090977 (1992-02-01), Strack et al.
patent: 5217564 (1993-06-01), Bozler et al.
patent: 5231047 (1993-07-01), Ovshinsky et al.
patent: 5336841 (1994-08-01), Adams
patent: 5374564 (1994-12-01), Bruel
patent: 5391257 (1995-02-01), Sullivan et al.
patent: 5609734 (1997-03-01), Streicher et al.
patent: 5637187 (1997-06-01), Takasu et al.
patent: 5641381 (1997-06-01), Bailey et al.
patent: 5710057 (1998-01-01), Kenney
patent: 5720929 (1998-02-01), Minkkinen et al.
patent: 5877070 (1999-03-01), Goesele et al.
patent: 5882987 (1999-03-01), Srikrishnan
patent: 5914433 (1999-06-01), Marker
patent: 6020252 (2000-02-01), Aspar et al.
patent: 6103597 (2000-08-01), Aspar et al.
patent: 6121504 (2000-09-01), Kuechler et al.
patent: 6150239 (2000-11-01), Goesele et al.
patent: 6190937 (2001-02-01), Nakagawa et al.
patent: 6221738 (2001-04-01), Sakaguchi et al.
patent: 6242324 (2001-06-01), Kub et al.
patent: 6323108 (2001-11-01), Kub et al.
patent: 6328796 (2001-12-01), Kub et al.
patent: 6340788 (2002-01-01), King et al.
patent: 6346458 (2002-02-01), Bower
patent: 6426235 (2002-07-01), Matsushita et al.
patent: 6429104 (2002-08-01), Auberton-Herve
patent: 6465327 (2002-10-01), Aspar et al.
patent: 6497763 (2002-12-01), Kub et al.
patent: 6504091 (2003-01-01), Hisamatsu et al.
patent: 6794276 (2004-09-01), Letertre et al.
patent: 6815309 (2004-11-01), Letertre et al.
patent: 6867067 (2005-03-01), Ghyselen et al.
patent: 6908828 (2005-06-01), Letertre et al.
patent: 7019339 (2006-03-01), Atwater et al.
patent: 2002/0190269 (2002-12-01), Atwater et al.
patent: 2003/0064535 (2003-04-01), Kub et al.
patent: 2004/0214434 (2004-10-01), Atwater et al.
patent: 2004/0235268 (2004-11-01), Letertre et al.
patent: 2005/0026432 (2005-02-01), Atwater et al.
patent: 2005/0032330 (2005-02-01), Ghyselen et al.
patent: 2005/0085049 (2005-04-01), Atwater et al.
patent: 2005/0142879 (2005-06-01), Atwater et al.
patent: 2005/0161078 (2005-07-01), Aiken
patent: 2005/0275067 (2005-12-01), Atwater et al.
patent: 0 060 103 (1982-09-01), None
patent: 03-270220 (1991-02-01), None
patent: WO 01/03172 (2001-01-01), None
Curtis Eng et al., “Integration of the UOP/HYDRO MTO Process into Ethylene Plants,” 10thEthylene Producers' Conference, 1998, pp. 54-85.
Bett et al., III-V Compounds for Solar Cell Applications, Appl. Phys. A, 1999, pp. 119-129, vol. 69, Springer-Verlag (published online: Jun. 24, 1999).
Bruel et al., Smart-Cut: A New Silicon on Insulator Material Technology Based on Hydrogen Implantation and Wafer Bonding, Mar. 1997, pp. 1636-1641, vol. 36, Jpn. J. Appl. Phys.
Cheng et al., Electron Mobility Enhancement in Strained-Si n-MOSFETs Fabricated on SiGe-on-Insulator (SGOI) Substrates, IEEE Electron Device Letters, Jul. 2001, pp. 321-323, vol. 22, No. 7.
Dobaczewski et al., Donor Level of Bond-Center Hydrogen in Germanium, Physical Review B, 2004, pp. 245207-1-6, vol. 69.
Georgakilas et al., Wafer-scale Integration of GaAs Optoelectronic Devices with Standard Si Integrated Circuits Using a Low-Temperature Bonding Procedure, Applied Physics Letters, Dec. 2002, pp. 5099-5101, vol. 81, No. 27, American Institute of Physics [Downloaded Oct. 19, 2004].
Gösele et al., Fundamental Issues in Wafer Bonding, J. Vac. Sci. Technol. A, Jul./Aug. 1999, pp. 1145-1152, vol. 17(4), American Vacuum Society.
Gösele et al., Semiconductor Wafer Bonding. Annu. Rev. Mater. Sci., 1998, pp. 215-241, vol. 28.
U.S. Appl. No. 11/004,808, filed Dec. 7, 2004, Atwater et al.
U.S. Appl. No. 11/193,637, filed Aug. 1, 2005, Atwater et al.
U.S. Appl. No. 11/357,436, filed Feb. 21, 2006, Atwater et al.
Huang et al., SiGe-on-Insulator Prepared by Wafer Bonding and Layer Transfer for High-Performance Field-Effect Transistors, Applied Physics Letters, Feb. 2001, pp. 1267-1269, vol. 78, No. 9, American Institute of Physics.
Tong et al., “Layer Splitting Process in Hydrogen-Implanted Si, Ge, SiC, and Diamond Substrates,” Appl. Phys. Lett., vol. 70, No. 11, Mar. 17, 1997, pp. 1390-1392.
Huang et al., Electron and Hole Mobility Enhancement in Strained SOI by Wafer Bonding, IEEE Transactions on Electron Devices, Sep. 2002, pp. 1566-1571, vol. 49, No. 9.
Langdo et al., Strained Si on Insulator Technology: From Materials to Devices, Solid-State Electronics, 2004, pp. 1357-1367, vol. 48, Elsevier Ltd.
Leroy et al., Controlled Surface Nanopatterning with Buried Dislocation Arrays, Surface Science, 2003, pp. 211-219, vol. 545, Elsevier B.V.
Ma et al., Solid-State Reaction-Mediated Low-Temperature Bonding of GaAs and InP Wafers to Si Substrates, Appl. Phys. Lett., Feb. 1994, pp. 772-774, vol. 64, No. 6, American Institute of Physics.
Maleville et al., Smart-Cut® Technology: From 300 mm Ultrathin SOI Production to Advanced Engineered Substrates, Solid-State Electronics, 2004, pp. 1055-1063, vol. 48, Elsevier Ltd.
Morral et al., InGaAs/InP Double Heterostructures on InP/Si Templates Fabricated by Wafer Bonding and Hydrogen-Induced Exfoliation, Applied Physics Letters, Dec. 2003, pp. 5413-5415, vol. 83, No. 26, American Institute of Physics.
Tong et al., Wafer Bonding and Layer Splitting for Microsystems, Adv. Mater., 1999, pp. 1409-1425, vol. 11, No. 17, Wiley-VCH Verlag GmbH.
Tong et al., Layer Splitting Process in Hydrogen-Implanted Si, Ge, SiC, and Diamond Substrates, Appl. Phys. Letter, Mar. 1997, pp. 1390-1392, vol. 70, No. 11, American Institute of Physics.
Tong et al., Hydrophobic Silicon Wafer Bonding, Appl. Phys. Lett., Jan. 1994, pp. 625-627, vol. 64, No. 5, American Institute of Physics.
Tong et al., A “Smarter-Cut” Approach to Low Temperature Silicon Layer Transfer, Appl. Phys. Lett., Jan. 1998, pp. 49-51, vol. 72, No. 1, American Institute of Physics.
Zahler et al., Ge Layer Transfer to Si for Photovoltaic Applications, Thin Solid Films, 2002, pp. 558-562, vol. 403-404, Elsevier Science B.V.
Zahler et al., Wafer Bonding and Layer Transfer Processes for 4-Junction High Efficiency Solar Cells, 29thIEEE Photovoltaic Specialists Conference, New Orleans, USA, (May 2002).
Auberton-Hervé et al., Smart-Cut® The Basic Fabrication Process for UNIBOND® SOI Wafers, IEICE Trans. Electron, Mar. 1997, pp. 358-363, vol. E80-C, No. 3, The Institute of Electronics, Information and Communication Engineers.
Tracy et al., Germanium-on-Insulator Substrates by Wafer Bonding, Journal of Electronic Materials, 2004, pp. 886-892, vol. 33, No. 8.
Zahler et al., J. Electron Mater., 33(8), (2004), pp. 22-23, (Abstracts K2 and K3).
Akatsu et al., Wafer Bonding of Different III-V Compound Semiconductors by Atomic Hydrogen Surface Cleaning, Journal of Applied Physics, Oct. 2001, pp. 3856-3862, vol. 90, No. 8, American Institute of Physics.
Bruel M., Silicon on Insulator Material Technology, Electronics Letters, Jul. 1995, pp. 1201-1202, vol. 31, No. 14.
Bruel M., Application of Hydrogen Ion Beams to Silicon on Insulator Material Technology, Nuclear Instruments and Methods in Physics Research B, 1996, pp. 313-319, vol. 108, Elsevier Science B.V.
Kim et al., Heterogeneous Silicon Integration by Ultra-High Vacuum Wafer Bonding, Journal of Electronic Materials, 2003, pp. 849-854, vol. 32, No. 8.
Lagnado et al., Integration of Si and SiGe with Al2O3(sapphire), Microelectronic Engineering, 2001, pp. 455-459, vol. 59, Elsevier Science B.V.
Taraschi et al., Strained Si, SiGe, and Ge On-Insulator: Review of Wafer Bonding Fabrication Techniques, Solid-State Electronics, 2004, pp. 1297-1305, vol. 48, Elsevier Ltd.
Wiegand et al., Wafer Bonding of Silicon Wafers Covered with Various Surface Layers, Sensors and Actuators, 2000, pp. 91-95, vol. 86, Elsevier Science B.V.
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