Batteries: thermoelectric and photoelectric – Photoelectric – Cells
Reexamination Certificate
2007-12-18
2007-12-18
Nguyen, Nam (Department: 1795)
Batteries: thermoelectric and photoelectric
Photoelectric
Cells
C136S261000
Reexamination Certificate
active
10497119
ABSTRACT:
A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom active cell (20) having a single-crystal silicon substrate base and an emitter layer (23). The multi-junction device (10) further comprises one or two subsequent active cells each having a base layer (32) and an emitter layer (23) with interconnecting tunnel junctions between each active cell. At least one layer that forms each of the top and middle active cells is composed of a single-crystal III-V semiconductor alloy that is substantially lattice-matched to the silicon substrate (22). The polarity of the active p-n junction cells is either p-on-n or n-on-p. The present invention further includes a method for substantially lattice matching single-crystal III-V semiconductor layers with the silicon substrate (22) by including boron and/or nitrogen in the chemical structure of these layers.
REFERENCES:
patent: 4278474 (1981-07-01), Blakeslee et al.
patent: 4681982 (1987-07-01), Yoshida
patent: 4963508 (1990-10-01), Umeno et al.
patent: 5002618 (1991-03-01), Kanai et al.
patent: 5009719 (1991-04-01), Yoshida
patent: 5571339 (1996-11-01), Ringel et al.
patent: 5944913 (1999-08-01), Hou et al.
patent: 6100546 (2000-08-01), Major et al.
patent: 6281426 (2001-08-01), Olson et al.
patent: 6300558 (2001-10-01), Takamoto et al.
patent: 6815736 (2004-11-01), Mascarenhas
patent: 63217672 (1988-09-01), None
patent: 09237909 (1997-09-01), None
Geisz et al, “Epitaxial growth of BGaAs and BGainAs by MOCVD,” preprint to be presented at the NCPV Program Review Meeting, Lakewood, CO, Oct. 14-17, 2001.
Geisz et al, “GaNPAs Solar Cells Lattice-Matched to GaP,” IEEE, pp. 864-867, (2002).
Geisz et al, “III-N-V semiconductors for solar photovoltaic applications,” Semiconductor Science and Technology, vol. 17, No. 8, published Jul. 10, 2002.
Geisz, et al., “BGaInAs Solar Cells Lattice-Matched to GaAs,” Conference Record of the 28th Photovoltaic Specialist Conference, New York,: IEEE Sep. 15-22, 2000, pp. 990-993.
Richard Corkish, “Some candidate materials for lattice-matched liquid-phase epitaxial growth on silicon”, Solar Cells, 31 (1991), pp. 537-548.
Friedman Daniel J.
Geisz John F.
Barton Jeffrey
Midwest Research Institute
Nguyen Nam
White Paul J.
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