Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2006-05-19
2010-06-29
Lee, Eugene (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S659000, C257S660000, C257S728000, C257S729000, C257S731000, C257SE23104
Reexamination Certificate
active
07745925
ABSTRACT:
A multi-functional metal shield case and a method for making the same are provided. The multi-functional metal shield case includes a metal main body and an electrically non-conductive and heat conductive silicon layer. The metal main body includes a base and sidewalls integrally bent along edges of the base, and the electrically non-conductive and heat conductive silicon layer is formed on inner sides of the base and the sidewalls. Accordingly, heat can be rapidly transferred to the metal main body and emitted to an outside. Since the heat conductive silicon layer is non-conductive, an electric shock does not occur between the electronic component and the metal shield case. Further, since the heat conductive silicon layer is in contact with the electronic component, heat can be transferred more rapidly.
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International Search Report, Feb. 18, 2005, 1 Page.
Gumedzoe Peniel M
Joinset Co., Ltd.
Lee Eugene
Park & Associates IP Law LLC
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