Multi-emitter or a multi-base transistor

Details Multi-emitter or a multi-base transistor Multi-emitter or a multi-base transistor

1995-02-01

1997-06-10

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257584, 257592, H01L 27082

Patent

active

056379102

ABSTRACT:
A transistor includes (a) a first semiconductor layer formed by a semiconductor substrate; (b) a second semiconductor layer formed on the first semiconductor layer and having an impurity of the same conductivity type as the first layer in a concentration lower than that of the first semiconductor layer; and (c) a third semiconductor layer formed on the second semiconductor layer having an impurity of the same conductivity type as the first semiconductor layer in a concentration lower than that of the second semiconductor layer. A base region is formed in the third layer and an emitter region is formed in the base region.

REFERENCES:
patent: 5221856 (1993-06-01), Dekker et al.
patent: 5386140 (1995-01-01), Matthews
Transistor Technique, Jan. 1993.
"Multiepitaxial-Planar-Leistungstransistoren," 2087 Elektronik, vol. 30, (1981.03) , No. 5, Munchen BRD.

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