Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means
Patent
1999-04-08
2000-03-28
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With specified electrode means
257584, 257588, H01L 27082, H01L 27102, H01L 2970, H01L 3111
Patent
active
060435534
ABSTRACT:
To provide a semiconductor device including a self-align type multi-emitter bipolar transistor wherein every collector-base isolation length can be reduced into a minimum value allowed in connection with the collector-base breakdown voltage, in a self-align type bipolar transistor having a multi-emitter structure, more than one emitter/base formation regions (114 and 115) and at least one collector leading region (106) are arranged in a single array, and extrinsic base regions (114) are connected to at least one base electrode (119c) having a contact plug (118c) provided outside the single array by way of a base leading electrode (109). Therefore, collector-base isolation lengths can be set to be a minimum length (e) determined by a collector-base breakdown voltage, enabling to minimize the collector resistance, the collector-base capacitance and the collector-substrate capacitance, as well as to minimize the element size of the bipolar transistor.
REFERENCES:
patent: 5539243 (1996-07-01), Matsuki
patent: 5629554 (1997-05-01), Maas et al.
patent: 5719432 (1998-02-01), Kariyazono et al.
Itoh, et. al. "Optimization of shallow and deep trench isolation structures for ultra-high-speed bipolar LSIs", IEEE 1992 Bipolar Circuits and Technology Meeting 4.7, pp. 104-107.
NEC Corporation
Ngo Ngan V.
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