Multi-element polycrystal for solar cells and method of...

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

Reexamination Certificate

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C136S261000, C438S097000

Reexamination Certificate

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10784932

ABSTRACT:
Provided is a multi-element polycrystal formed by cooling a melt containing multiple components while controlling a cooling rate. The multi-element polycrystal is a mixed crystal essentially formed of elements Si and Ge having different absorption wavelength ranges and having a composition represented by Si1-XGeX, in which Ge absorbs light over a longer range of wavelength from a shorter to longer wavelength range than Si, each of the crystal grains of the mixed crystal has a matrix having a plurality of discrete regions dispersed therein, the average matrix composition is represented by Si1-x1Gex1and the average composition of the discrete regions is represented by Si1-x2Gex2where X1<X<X2. Also, provided is a solar-cell polycrystal satisfying high light-absorption efficiency and low cost by using the multi-element polycrystal, a solar cell and a method of manufacturing the solar cell.

REFERENCES:
patent: 5141564 (1992-08-01), Chen et al.
patent: 5437734 (1995-08-01), Matsushita et al.
patent: 2002/0139416 (2002-10-01), Nakajima et al.
Saidov et al, Technical Physics Letters, 27, 2001, pp. 319-322.
Chan et al, Materials Letters, 14, 1992, pp. 263-267.
N. Usami, et al., Japan-Australia Workshop on Advanced Materials, Institute for Materials Research (IMR), pp. xiv and 16, “Advanced Si-Based Materials for Solar Cell Applications: Multicrystalline-SiGe With Microscopic Compositional Distribution and Vertically Stacked-Ge Islands”, Jan. 15-19, 2004.
N. Usami, et al., Journal of Applied Physics, vol. 94, No. 2, pp. 916-920, “Influence of the Elastic Strain on the Band Structure of Ellipsoidal SiGe Coherently Embedded in the Si Matrix”, Jul. 15, 2003.
K. Nakajima, et al., The Fourth International Edition of: Romanian Conference on Advanced Materials, 5 pages, “Melt Growth of SiGe Bulk Crystals With Uniform Composition and SiGe Multicrystals With Microscopic Compositional Distribution for New Si/SiGe Heterostructural Solar Cells”, Sep. 15-18, 2003.
K. Nakajima, et al., Abstract Book, 15thAmerican Conference on Crystal Growth and Epitaxy and 11thBiennial Workshop on OMVPE and 3rdInternational Symposium on Lasers and Nonlinear Optical Materials, pp. 12, 45 and 46, Jul. 2003.
K. Fujiwara, et al., 3rdWorld Conference on Photovoltaic Engery Conversion, 5 pages, “Structure and Property of Directionally Grown SiGe Multicrystals With Microscopic Compositional Distribution”, May 11-18, 2003.
K. Nakajima, et al., Solar Engergy Materials & Solar Cells, vol. 73, pp. 305-320, “Growth and Properties of SiGe Multicrystals With Microscopic Compositional Distribution for High-Efficiency Solar Cells”, 2002.
N. Usami, et al., Journal of Applied Physics, vol. 92, No. 12, pp. 7098-7101, “Strain Distribution of Si Thin Film Grown on Multicrystalline-SiGe With Microscopic Compositional Distribution”, Dec. 15, 2002.
N. Usami, et al., Jpn. J. Appl. Phys., vol. 41, part 1, No. 7A, pp. 4462-4465, “Evidence of the Presence of Built-In Strain in Multicrystalline SiGe With Large Compositional Distribution”, Jul. 2002.
N. Usami, et al., Jpn. J. Appl. Phys., vol. 41, Part 2, No. 1A/B, pp. L37-L39, “Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution”, Jan. 15, 2002.
K. Nakajima, et al., Abstract Book, International Forum on Science and Technology of Crystal Growth, 4 pages, “Melt Growth of SiGe Bulk Crystals With Uniform Composition and SiGe Multicrystals With Microscopic Compositional Distrubution for Heterostructure Device Applications”, Mar. 4-5, 2002.
K. Nakajima, et al., Abstract Book, Thirteenth American Conference on Crystal Growth and Epitaxy, Sesion 1A, pp. iv, vii and 5, “Growth of SiGe Bulk Crystal With Compositional Uniformity Over 20mm by Controlling the Growth Temperature Utilizing in Situ Monitoring System”, Aug. 12-16,2001.
N. Usami, et al., Extended Abstracts of the 20thElectronic Materials Symposium, Nara, pp. 185-186, “Multicrystalline SiGe With Microscopic Compositional Distribution for New Solar Cell Applications”, Jun. 20-22, 2001.
K. Nakajima, et al., The European Material Conference, European Materials Research Society, pp. E-2, “Melt Growth of Multicrystalline SiGe With Large Compositional Distribution for New Solar Cell Applications”, Jun. 5-8, 2001.
K. Nakajima, et al., pp. 1-64, “Reports on Development of Si/SiGe Solar Cell Using SiGe Multicrystalline Substrate”, Mar. 2003 (with partial English translation).
K. Nakajima, et al., pp. 1-32, “Reports on Development of Si/SiGe Solar Cells Using SiGe Multicrystaline Substrate”, Mar. 2002 (with partial English translation).
K. Fujiwara, et al., Extended Abstracts (The 50thSpring Meeting), The Japan Society of Applied Physics and Related Societies, No. 1, p. 457 , “29a-ZV-3 Crystallographic Orientation Analysis of Directional Grown Si Multicrystals”, Mar. 2003.
K. Fujiwara, et al., Extended Abstracts (The 50thSpring Meeting), The Japan Society of Applied Physics and Related Societies, No. 1, p. 458, “29a-ZV-5 Crystallographic Orientation Analysis and Absorption Coefficient Measurement of Directional Grown SiGe Multicrystals With Microscopic Compositional Distribution” Mar. 2003 and “29a-ZV-6 Elastic Strain in Ellipsoidal SiGe Inclusion Coherently Embeded in Si Matrix and its Impact on the Band Structure”, Mar. 2003.
T. Ujihara, et al., Extended Abstracts (The 63thAutumn Meeting) The Japan Society of Applied Physics, No. 2, p. 783, “26p-G-4 Effect of Growth Temperature on the Morphology of Epitaxial Silicon Film on Si(111) by LPE Method”, Sep. 2002.
K. Nakajima, et al., p. 57, Abstract of Lecture Meeting, The Japan Society of Metal, “S122”, Mar. 28-30, 2002.
K. Nakajima, et al., pp. 284, Abstract of Lecture Meeting, The Japan Society of Metal, “ABSTRACT 414”, Mar. 28, 2002.
K. Nakajima, et al., 2 pages, The 169thForum on Material Science, Nov. 26, 2001.
K. Nakajima, et al., pp. 104-107, Workshop on High Efficiency Solar Cell and Photovoltaic Generation, Nov. 15, 2001.
K. Nakajima, et al., p. 161, Abstract of Lecture Meeting of The Japanese Society of Metal, “ABSTRACT S8. 17”, Sep. 22-24, 2001.
K. Nakajima, et al., p. 476, Abstract of Lecture Meeting of the Japanese Society of Metal, “ABSTRACT 848”, Sep. 22-24, 2001.
N. Usami, et al., Extended Abstracts (The 62thAutumn Meeting), The Japan Society of Applied Physics, No. 1, pp. 302, 368 and 458, “12a—S—11 Control of Macroscopic Properties of Multicrystalline-SiGe by Microscopic Compositional Distribution” and “26a-P11-3 Characterization of Multicrystalline SiGe With Microscopic Compositional Distribution Using μ-Raman Spectroscopy”, Sep. 11, 2001.
K. Nakajima, et al., Extended Abstracts (The 48thSpring Meeting), The Japan Society of Applied Physics and Related Societies, No. 1, pp. 452, “Melt Growht of Multicrystalline SiGe With Large Compositional Distribution for New Solar Cell Applications”, Mar. 28-31, 2001.
N. Nakajima, et al., Crystal Letters, No. 18, pp. 3-14, Dec. 2001 (with English Abstract).
P. Geiger, et al., “Multicrystalline SiGe Solar cells wtih Ge content above 10 at%”, Proceedings of 16thEuropean photovoltaic Solar Energy Conference, May 1-5, 2000, Glasgow, UK., Edited by H. Scheer et. al., James & James, London, vol. 1, pp. 150-153.
Kazuo Nakajima, et al., “Growth of Ge-rich, SixGe1-xsingle crystal with uniform composition (x=0.02) on a compositionally graded crystal for use as GaAs solar cells”, Journal of Crystal Growth, vol. 205, No. 3, Aug. 1999, pp. 270-276.
Kazuo Nakajima, et al., “Bridgmen growth of compositionally graded InxGa1-xAs (x=0.05-0.30) single crystals for use as seeds for In0.25Ga0.75As crystal growth”, Journal of Crystal growth, vol. 173, No. 1-2, Mar. 1997, pp. 42-50.
J. G. We

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