Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Reexamination Certificate
2006-08-01
2006-08-01
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant concentration or concentration profile
C257S089000, C257SE33061, C257SE33068
Reexamination Certificate
active
07084436
ABSTRACT:
A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green and blue and UV light, such that the LED emits green, blue, red light and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state laser having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth or transition elements.
REFERENCES:
patent: 4992302 (1991-02-01), Lindmayer
patent: 5684309 (1997-11-01), McIntosh et al.
patent: 5757026 (1998-05-01), Forrest et al.
patent: 5813753 (1998-09-01), Vriens et al.
patent: 5898185 (1999-04-01), Bojarczuk, Jr. et al.
patent: 5952681 (1999-09-01), Chen
patent: 5959316 (1999-09-01), Lowery
patent: 6093941 (2000-07-01), Russell et al.
patent: 6166489 (2000-12-01), Thompson et al.
patent: 6212213 (2001-04-01), Weber et al.
patent: 6239901 (2001-05-01), Kaneko
patent: 6255669 (2001-07-01), Birkhahn et al.
patent: 6337536 (2002-01-01), Matsubara et al.
patent: 3315675 (1983-11-01), None
patent: 9013615 (1990-12-01), None
patent: 19645035 (1998-04-01), None
patent: 05152609 (1993-06-01), None
patent: 08007614 (1996-01-01), None
patent: 10056203 (1998-02-01), None
patent: WO 9750132 (1997-12-01), None
Nicha Corp Part Specification,High Brightness LEDs, (May 1999), pp. 1-3. (NSPW 300BS, NSPW).
Prentice Hall,Laser Electronics 2ndEdition, J.T. Verdeyen, p. 363 (1989).
Publication No. 2002-0003233 A1, Jan. 2002, Mueller-Mach et al.
Patent Abstracts of Japan, vol. 017, No. 542 (E-1441), Sep. 29, 1993.
Patent Abstracts of Japan, vol. 096, No. 005, May 31, 1996.
DenBaars Steven P.
Keller Bernd
Mack Michael
Tarsa Eric J.
Thibeault Brian
Cree Inc.
Jackson Jerome
Koppel Patrick & Heybl
LandOfFree
Multi element, multi color solid state LED/laser does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multi element, multi color solid state LED/laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi element, multi color solid state LED/laser will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3665380