Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Patent
1991-04-08
1992-01-07
Fields, Carolyn E.
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
25037011, 25037014, G01T 124
Patent
active
050794264
ABSTRACT:
A multi-element-amorphous-silicon detector-array real-time imager and dosimeter for diagnostic or megavoltage X rays having megavoltage photons having a plurality of photodiodes made of hydrogenated amorphous silicon arrayed in columns and rows upon a glass substrate. Each photodiode is connected to a thin film field effect transistor also located upon the glass substrate. Upper and lower metal contacts are located below and above the photodiodes to provide the photodiodes with a reverse bias. The capacitance of each photodiode when multiplied by the resistance of the field effect transistor to which it is connected yields an RC time constant sufficiently small to allow real time imaging.
REFERENCES:
patent: 4146904 (1979-03-01), Baertsch et al.
patent: 4382187 (1983-05-01), Fraleux et al.
patent: 4589003 (1986-05-01), Yamada et al.
patent: 4752814 (1988-06-01), Tuan
patent: 4785186 (1988-11-01), Street et al.
patent: 4799094 (1989-01-01), Rougeot
patent: 4810881 (1989-03-01), Berger et al.
patent: 4823178 (1989-04-01), Suda
patent: 4889983 (1989-12-01), Numano et al.
patent: 4940901 (1990-07-01), Henry et al.
L. E. Antonuk et al., "Large Area Amorphous Silicon Photodiode Arrays for Radiotherapy and Diagnostic Imaging", pp. 1-12.
N. A. Baily et al., "Fluoroscopic Visualization of Megavoltage Therapeutic X Ray Beams", pp. 935-939.
P. Munro et al., "A Digital Fluoroscopic Imaging Device for Radiotherapy Localization", pp. 1-20, Oct. 9-14, 1988, New Orleans, La., Abstract #163.
Article entitled, "Hydrogenated Amorphous Silicon and Thin Film Electrons For Pixel Detectors", LBL-27844, 3 pages, Sep. 1989, V. Perez-Mendez et al.
Article entitled, "Amorphous Semiconductors For Particle Detection: Physical and Technical Limits and Possibilities", Nuc. Instr. & Methods in Phys. Research, A275, 1989, pp. 558-563, Bernard Equer et al.
Article entitled, "Amorphous Silicon Position-Sensitive Detector", Nucl. Instr. and Methods in Physics Research, A273, 1988, pp. 640-644, Koh-ichi Mochiki et al.
Perez-Mendez et al., "Proposed a-Si:H Electronics for Pixel Detector", Lawrence Berkeley Laboratory, LBL-26254, Nov. 1988.
Perez-Mendez et al., "The Application of Thick Hydrogenated Amorphous Silicon Layers to Charged Particle and X-Ray Detection", MRS, vol. 149, Apr. 1989, pp. 621-630.
Perez-Mendez et al., "Hydrogenated Amorphous Silicon Pixel Detectors for Minimum Ionizing Particles", Lawrence Berkeley Laboratory, LBL-25114, Apr. 1988.
Perez-Mendez et al., "Proposed Thin Film Electronics for a-Si:H Pixel Detectors", Lawrence Berkeley Laboratory, LBL-26254, Mar. 1989.
L. E. Antonuk et al., "Signal, Noise, and Readout Considerations in the Development of Amorphous Silicon Photodiode Arrays for Radiotherapy and Diagnostic X-Ray Imaging", SPIE Conference Medical Imaging V, Feb./Mar. 1991.
H. C. Tuan, "Amorphous Silicon Thin Film Transitor and Its Applications to Large-Area Electronics", Mat. Res. Soc. Symp. Proc., vol. 33, 1984, pp. 247-257.
Fujieda et al., "Applications of a-Si:H Radiation Detectors", LBL-27457, Jun. 1989.
Antonuk Larry E.
Street Robert A.
Fields Carolyn E.
The Regents of the University of Michigan
Xerox Corporation
LandOfFree
Multi-element-amorphous-silicon-detector-array for real-time ima does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multi-element-amorphous-silicon-detector-array for real-time ima, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-element-amorphous-silicon-detector-array for real-time ima will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-823875