Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-10-24
2006-10-24
Nguyen, Kiet T. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
Reexamination Certificate
active
07126140
ABSTRACT:
A multi-electron beam exposure method and apparatus, wherein electron beams are applied to a sample surface mounted on a traveling sample stage to perform repeated exposure of chip patterns. An exposure region of the sample surface is partitioned into multiple stripe regions having a width in an x-axis direction, and each of the multiple stripe regions is further partitioned into multiple main fields having a width in a y-axis direction. At least one of the widths of the main fields in the x- and y-axis directions is set to a value, and exposure pattern data for one chip based on the partitioned main fields is stored as a unit. The stored exposure pattern data is readout a number of times corresponding to the number of chips repeatedly, and each electron beam provides repeated exposure of same regions of the chips.
REFERENCES:
patent: 6014200 (2000-01-01), Sogard
patent: 6090527 (2000-07-01), Yamazaki et al.
patent: 6483120 (2002-11-01), Yui
patent: 6515409 (2003-02-01), Muraki
patent: 6787784 (2004-09-01), Okunuki
patent: 0 794 552 (1997-09-01), None
patent: 07-273006 (1995-10-01), None
patent: 2000-243337 (2000-09-01), None
patent: WO 01/35165 (2001-05-01), None
Hashimoto Shin'ichi
Ohta Hiroya
Souda Yasunari
Yoda Haruo
Yui Yoshikiyo
Advantest Corporation
Antonelli, Terry Stout and Kraus, LLP.
Canon Kabushiki Kaisha
Hitachi , Ltd.
Nguyen Kiet T.
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