Multi-dimensional high-resolution probe for semiconductor measur

Details Multi-dimensional high-resolution probe for semiconductor measur Multi-dimensional high-resolution probe for semiconductor measur

1992-01-06

1993-05-25

Strecker, Gerard R.

Electricity: measuring and testing

Impedance, admittance or other quantities representative of...

Lumped type parameters

324 725, 324158P, 324713, 324724, G01R 2714

Patent

active

052143899

ABSTRACT:
A probe which is positioned in at least one axis by a piezoelectric transducer is provided. One or more piezoelectric transducers control position of the probe with respect to another probe, with respect to a sample surface, or with respect to a previous position of the probe itself. A method for measuring spreading resistance is provided where the distance between two probes is reproducibly controlled in the range of a few angstroms by measuring tunneling current between the two probes, and electrical contact between the two probes and a sample is reproducibly provided by monitoring current between the probes and the sample.

REFERENCES:
patent: 4941753 (1990-07-01), Wickramasinghe
patent: 4992728 (1991-02-01), McCord et al.
patent: 5017266 (1991-05-01), Zdeblick et al.
M. Fotino, "Nanometer-Sized Tungsten Tips For STM and AFM", Proceedings of the 49th Annual Meeting of the Electron Microscopy Society of America, 1991, pp. 386-387.

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