Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2011-06-21
2011-06-21
Cao, Phat X (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S706000, C257S707000, C257S777000
Reexamination Certificate
active
07964951
ABSTRACT:
A semiconductor device includes first and second stacked semiconductor dies on a substrate. A lid having a plurality of fins extending downwardly into the cavity is mounted on the substrate to encapsulate the semiconductor dies. At least some of the fins are longer than other ones of said fins. The lid is attached to the substrate, with the longer fins extending downwardly above a region of the substrate not occupied by the first die. The shorter fins extend downwardly above a region of said first die not covered by said second die. A thermal interface material fills the remainder of the cavity and is in thermal communication with both dies, the substrate and the fins. The lid may be molded from metal. The lid may be bonded to the topmost die, using a thermal bonding material that may be liquid metal, or the like.
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International Search Report and Written Opinion from Canadian Patent Office; International Application No. PCT/CA2010/000378; dated Jun. 23, 2010.
ATI Technologies ULC
Cao Phat X
Vedder Price P.C.
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