Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2007-07-31
2010-10-05
Williams, Alexander O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257SE25003, C257SE21336, C257SE21427, C257SE29190, C257SE29121, C257SE29119, C257SE29133, C257SE29122, C257SE29146, C257SE29156, C257SE29157, C257S685000, C257S686000, C257S723000, C257S728000, C257S777000, C257S784000, C257S786000, C257S696000, C257S698000, C323S282000
Reexamination Certificate
active
07808102
ABSTRACT:
A DC-DC boost converter in multi-die package is proposed having an output Schottky diode and a low-side vertical MOSFET controlled by a power regulating controller (PRC). The multi-die package includes a single die pad with the Schottky diode placed there on side by side with the vertical MOSFET. The PRC die is attached atop the single die pad via an insulating die bond. Alternatively, the single die pad is grounded. The vertical MOSFET is a top drain vertical N-channel FET, the substrate of Schottky diode die is its anode. The Schottky diode and the vertical MOSFET are stacked atop the single die pad. The PRC is attached atop the single die pad via a standard conductive die bond. The Schottky diode die can be supplied in a flip-chip configuration with cathode being its substrate. Alternatively, the Schottky diode is supplied with anode being its substrate without the flip-chip configuration.
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Hébert François
Sun Ming
Alpha & Omega Semiconductor Ltd.
CH Emily LLC
Tsao Chein-Hwa
Williams Alexander O
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